M03900 - SEMI M39 - Test Method for Measuring Resistivity and Hall Coefficient and Determining Hall Mobility in Semi-Insulating GaAs Single Crystals Revision:SEMI M39-0999 - Inactive originally published February 2008

originally published February 2008

SEMI M52 — Guide for Specifying Scanning Surface Inspection Systems for Silicon Wafers for the 130 nm

as well as the MOTIONNET Public Specification

SEMI M65-0306 (first published)

SEMI D50-0707 (first published)

M03900 - SEMI M39 - Test Method for Measuring Resistivity and Hall Coefficient and Determining Hall Mobility in Semi-Insulating GaAs Single Crystals Revision:SEMI M39-0999 - Inactive originally published February 2008This test method was technically approved by the global Compound Semiconductor Committee and is the direct responsibility of the Japanese Compound Semiconductor Committee. Current edition approved by the Japanese Regional Standards Committee on June 1, 1999. Initially available at www. semi. org August 1999; to be published September 1999. The purpose of this document is to specify a method to measure resistivity and determine Hall mobility of semi